specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 4 june 2011 WJA1010 +5v active-bias ingap hbt gain block product features ? cascadable gain block ? 50 C 2300 mhz ? 15 db gain ? +19 dbm p1db ? +36.5 dbm oip3 @ 900mhz ? operates from +5v @ 85ma ? robust 1000v esd, class 1c ? rohscompliant sot89 package applications ? wireless infrastructure ? general purpose ? catv / ftth ? vhf / uhf transmission product description the WJA1010 is a cascadable gain block that offers high linearity in a lowcost surfacemount package. at 900 mhz, the WJA1010 typically provides 15 db gain, +36 .5 dbm oip3, and +19 dbm p1db. the device is housed in a rohscompliant sot89 industrystandard smt package using a nipdau plating to eliminate the possibility of tin whiskering. the WJA1010 consists of darlington pair amplifiers using a high reliability ingap/gaas hbt process technolog y. the mmic amplifier is internally matched to 50? and only requires dcblocking capacitors and a bias inductor for operation. an internal active bias is designed to enable stable performance over temperature. a dropping bia s resistor is not required allowing the device to be biased directly from a +5v supply voltage. the broadband amplifier can be directly applied to various current and next generation wireless technologies s uch as gsm, pcs, and wcdma. the WJA1010 is ideal for general purpose applications such as lo buffering, if amplification and predriver stages within the 50 t o 2300 mhz frequency range. functional diagram rf in gnd rf out gnd 1 2 3 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 50 2300 test frequency mhz 900 gain db 13.5 15 16.5 input return loss db 13 output return loss db 17 output p1db dbm +19 output ip3 (2) dbm +33 +36.4 output ip2 dbm +48.1 noise figure db 5.2 device voltage v 5 device current ma 72 85 92 1. test conditions: 25 oc, supply voltage = +5 v, 50 system. sparameters and 3oip measured at device pins. all other specifications measured on e valuation board. 2. 3oip measured with two tones at an output power of +8 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature 55 to +150 c supply voltage +6.5 v input power +24 dbm jc (junction to paddle) 80.6 c / w maximum junction temperature 150 c operation of this device above any of these paramet ers may cause permanent damage. typical performance (3) parameter units typical frequency mhz 200 500 900 1900 2100 s21 db 14.9 14.7 14.5 14 14.2 s11 db 13 14 17 17 17 s22 db 20 18 17 9 10 output p1db dbm +19.6 +19.5 +19 +16.2 +15 output ip3 (2) dbm +41.8 +40.3 +36.2 +28.7 +27.2 output ip2 dbm +55.3 +54.2 +48.1 +40.3 +39.7 noise figure db 4.8 5 5.2 5.7 6.2 3. listed typical performance parameters measured o n evaluation board. ordering information part no. description WJA1010 +5v active bias ingap hbt gain block (leadfree/green/rohscompliant sot89 package) standard tape / reel size = 1000 pieces on a 7 reel not recommended for new designs recommended replacement parts: tqp3m9028 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 4 june 2011 WJA1010 +5v active-bias ingap hbt gain block typical evaluation board rf performance supply bias = +5v, i cc = 85 ma gain vs. frequency 8 10 12 14 16 0 500 1000 1500 2000 2500 frequency (mhz) gain (db) -40c +25c +85c return loss t = 25c -30 -25 -20 -15 -10 -5 0 0 500 1000 1500 2000 2500 frequency (mhz) s11, s22 (db) s11 s22 noise figure vs. frequency 2 3 4 5 6 7 8 9 10 0 500 1000 1500 2000 2500 frequency(mhz) nf(db) -40c +25c +85c oip3 vs. output power 25 30 35 40 45 0 2 4 6 8 10 output power per tone (dbm) oip3 (dbm) oip3 vs. frequency pout=8 dbm/tone, t = 25c 25 30 35 40 45 0 500 1000 1500 2000 frequency (mhz) oip3 (dbm) oip3 vs. vcc freq = 900mhz 25 30 35 40 45 4.7 4.8 4.9 5.0 5.1 5.2 vcc (v) oip3 (dbm) oip2 vs. frequency pout = 8dbm/tone 35 40 45 50 55 60 0 500 1000 1500 2000 2500 frequency (mhz) oip2 (dbm) p1db vs. frequency 12 14 16 18 20 22 0 500 1000 1500 2000 2500 frequency(mhz) p1db(dbm) -40c +25c +85c p1db vs. vcc freq = 900 mhz 12 14 16 18 20 22 4.7 4.8 4.9 5 5.1 5.2 supply voltage (v) p1db (dbm) icc vs. temperature vcc = +5v 75 80 85 90 95 -50 -25 0 25 50 75 100 temperature (c) icc (ma) icc vs. vcc 20 40 60 80 100 120 140 4.0 4.5 5.0 5.5 6.0 vcc (v) icc (ma) -40c +25c +85c www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 4 june 2011 WJA1010 +5v active-bias ingap hbt gain block application circuit recommended component values (1) ref. name value / type size l1 470 nh ferrite core wire wound inductor (2) 0805 c1, c2 1000 pf npo chip capacitor 0603 c3 0.018 f chip capacitor 0603 r1, r2, r4 0 (3) 0603 c4, r3, r5 do not place (3) 1. the listed values are contained on the evaluation b oard to achieve optimal broadband performance 2. for lower cost and performance (500 C 2000 mhz) opt ion use 39 nh air core wire wound inductor. 3. place holders for the 0 resistors and do not place references are not ne eded for final design. typical device data sparameters (v device = +5 v, i cc = 85 ma, t = 25 c, calibrated to device leads) freq s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 10 12.04 60.82 19.05 165.91 22.30 19.64 8.59 4 1.53 50 13.71 143.09 15.80 165.50 19.42 6.67 15.87 109.00 100 13.82 161.46 15.31 167.89 19.20 2.07 18.24 135.07 200 13.85 171.92 15.10 164.60 19.10 2.47 19.29 152.17 300 13.69 175.70 15.07 159.95 19.10 5.78 19.50 157.22 400 13.65 177.47 15.10 154.59 19.11 8.12 19.68 160.24 500 13.43 178.71 15.03 148.80 19.09 10.48 19.4 9 161.23 600 13.21 179.92 15.05 143.18 19.13 13.54 19.4 8 164.03 700 13.21 179.29 15.03 137.23 19.11 15.47 18.9 2 161.58 800 13.13 176.94 15.00 131.54 19.09 18.52 18.7 6 162.42 900 13.25 175.80 14.95 125.63 19.05 20.44 17.9 8 159.66 1000 13.40 171.04 15.00 120.03 19.11 23.46 17. 13 160.05 1100 13.45 167.86 14.89 114.13 19.05 26.31 16. 34 157.69 1200 13.70 163.82 14.90 107.42 19.14 28.31 15. 63 158.10 1300 13.71 160.39 14.87 101.34 19.05 30.76 14. 87 157.31 1400 13.73 157.23 14.79 95.53 19.02 33.72 14.4 2 157.48 1500 13.78 154.96 14.80 89.31 19.12 36.32 13.8 4 158.93 1600 13.91 152.71 14.77 82.83 19.12 39.05 13.6 2 159.31 1700 13.94 151.56 14.73 76.51 19.00 41.55 13.1 3 160.67 1800 14.25 151.18 14.70 70.01 19.05 44.05 12.8 5 161.89 1900 14.68 150.94 14.67 63.49 19.02 47.20 12.3 2 164.74 2000 15.46 152.07 14.63 57.47 19.12 49.85 11.7 4 165.33 2100 16.40 152.54 14.57 50.95 19.10 53.35 11.2 0 168.18 2200 17.65 156.49 14.43 44.02 19.15 55.79 10.4 3 171.27 2300 19.22 161.75 14.23 37.40 19.19 59.36 9.87 174.30 2400 20.22 172.76 14.15 30.44 19.32 61.81 9.02 176.99 device sparameters are available for download from the website at: http://www.triquint.com c1 blocking capacitor rf out l1 rf choke c3 bypass capacitor r4 0 rf in c2 blocking capacitor vcc =+5.00v icc = 85 ma WJA1010 r1 0 r2 0 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 4 june 2011 WJA1010 +5v active-bias ingap hbt gain block mechanical information this package is leadfree/green/rohscompliant. it is compatible with both leadfree (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the pla ting material on the leads is nipdau. outline drawing land pattern product marking the WJA1010 will be marked with an a1010 designator with an alphanumeric lot code marked below the part designator. tape and reel specifications for this part are located on the website in the application notes section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard jstd020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35m m (#80 / .0135) diameter drill and have a final plat ed thru diameter of .25 mm (.010). 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance . 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / ther mal via region contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. a1010 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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